p a r a m e t er l v a l ue u n it c o ll e c t o r - b a s e v o l t a ge v c bo 60 v c o ll e c t o r - e m i t t e r v o l t a ge v c eo 60 v e m i t t e r - b a s e v o l t a ge v ebo 7 v c o ll e c t o r c u r r e nt i c 3 .0 a b a s e c u rr e nt i b 0 .5 a t o t a l d i ss i p a t i o n at p t ot 30 w m a x . o p e r a t i ng j u n c t i o n t e m p e r a t u re t j 150 o c s t o r a ge t e m p e r a t u re t s tg - 55 ~ 150 o c p a r a m e t er s y m b ol t e s t c o n d i t i ons m i n. t y p. m ax. u n it c o ll e c t o r c u t - o ff c u r r e n t i c bo v cb = 60 v , i e =0 0 .1 ma e m i t t e r c u t - o ff c u r r e nt i ebo v eb = 7 v , i c =0 0 .1 ma c o ll e c t o r - e m i t t e r s u s t a i n i n g v o l t age v c eo i c = 50 m a , i b =0 60 v dc c u r r e n t g a in h f e( 1) v ce = 5 v , i c = 0 . 5a 60 300 h f e( 2) v ce = 4 v , i c = 3 . 0a 25 c o ll e c t o r - e m i t t e r s a t u r a t i o n v o l t age v c e(s a t) i c = 2 a ,i b = 200 ma 1 .0 v b a s e - e m i tt e r s a t u r a t i o n v o l t a ge v be(s a t) v ce = 5 v ,i c = 0 . 5a 1 .0 v c u rr e n t g a i n b a nd w i d t h p r odu ct f t v ce = 5 v ,i c = 500 ma 3 .0 m hz e l e c t r i c a l ch ar ac t e r i s t i cs a b s o l u t e m a x i m u m r a t i n gs ( t a = 2 5 c) o ( t a = 2 5 c) o ? 2SD1351 pb free plating product 2SD1351 npn complementary silicon power transistors pb base 1 collector 2 3 emitter 1. base 2. collector 3. emitter 1 2 3 features z z fast switching speed. z wide aso. z complements the 2sb988. wide safe operationg area. to-220c applications z power amplifier applications. z vertical output applications. z switching applications. 9.19 0.20 3.60 0.20 9.90 0.20 2.80 0.20 15.70 0.20 13.08 0.20 3.02 0.20 2.54typ 6.50 0.20 0.80 0.20 1.27 0.20 1.52 0.20 1.30 0.20 4.50 0.20 0.50 0.20 2.40 0.20 2.54typ dimensions in millimeters to-220c package dimension ? 2006 thinki semiconductor co.,ltd. http://www.thinkisemi.com/ page 1/1 rev.04
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